硒化铋晶体 Bi2Se3(Bismuth Selenide)
晶体尺寸：10毫米
电学性能：拓扑绝缘体
晶体结构：菱面体
晶胞参数：a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%
X-ray diffraction on a Bi2Se3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 6 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24
XRD of a single crystal Bi2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
EDX of a single crystal Bi2Se3.
Raman of a single crystal Bi2Se3. Measurement with a 785nm Raman at room temperature.
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