硒化锗晶体（99.995） GeSe 返回列表页

硒化锗晶体 GeSe (Germanium Selenide)
晶体尺寸：~10毫米
电学性能：半导体
晶体结构：斜方晶系
晶胞参数：a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a GeSe single crystal aligned along the (100) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal GeSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GeSe by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GeSe. Measurement was performed with a 785 nm Raman system at room temperature.