当前位置:泰州巨纳新能源有限公司>>二维材料>>硒化物晶体>> 二硒化钨晶体(99.995) WSe2
GaTe 碲化镓晶体 (Gallium Telluride)
供货周期 | 现货 | 应用领域 | 环保,化工,能源,综合 |
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二硒化钨晶体 WSe2(Tungsten Diselenide)-P型
晶体尺寸:~10毫米
电学性能:半导体,P型
晶体结构:六边形
晶胞参数:a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120°
晶体类型:合成
晶体纯度:>99.995%
X-ray diffraction on a WSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal WSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal WSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal WSe2. Measurement was performed with a 785 nm Raman system at room temperature.
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