CVD铜基单层氮化硼薄膜0 返回列表页

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品牌2D Semiconductors

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二维材料: 钙钛矿/OLED 异质结 MOFS材料其他二维材料二维材料溶液二维材料薄膜二维材料粉末绝缘体黑磷六方氮化硼晶体碲化物晶体硒化物晶体硫化物晶体

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供货周期	现货	应用领域	环保,化工,能源,综合

Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.

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Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN