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化工仪器网>产品展厅>半导体行业专用仪器>热工艺设备/热处理设备>退火炉>AccuThermo AW 610 快速退火炉 或保护气氛热处理炉

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AccuThermo AW 610 快速退火炉 或保护气氛热处理炉

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  • 公司名称 Allwin21 Corp
  • 品牌
  • 型号 AccuThermo AW 610
  • 产地 USA
  • 厂商性质 生产厂家
  • 更新时间 2017/7/5 5:21:47
  • 访问次数 3111

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Allwin21 Corp. 2000年成立于美国硅谷,主要为半导体工业,生物医疗,纳米技术,微机械工程系统,太阳能电池,LED 等行业专业供应快速退火炉, 等离子去胶,等离子刻蚀,溅射等设备。我们致力于成为产业的*,为此,在范围内为客户提供*的、成本合理的技术解决方案,高品质的设备及备件和业界*的交货周期。我们在不断发展的高科技生产领域已占有一席之地。很荣幸地与众多客户建立了*稳定的合作关系。

提供及时负责的技术支持和服务是半导体服务行业的生命。Allwin21拥有经验丰富的技术团队,为高品质技术服务奠定了可靠的基础。我们提供现场安装、培训、维护、系统优化、改造、定制升级等服务。

AllWin21 Corp正在快速成长,不断地为客户提供高性能的设备。体贴、适应、品质和创新一直是激励我们走向成功的动力。

快速退火系列
溅射系列
等离子去胶系列
等离子刻蚀系列

快速退火炉AG Heatpulse 610; AG Heatpulse 4100 ;AG Heatpulse 4108; 打胶机 GASONICS AURA 1000 ; GASONICS AE2001; GASONICS AE 2000LLL; 打胶机 MATRIX 105/106/303/403 ; 等离子刻蚀机 TEGAL 901/903; 探针台 EG2001; EG 2010; EG 1034; 测试仪 HP4062;HP4145; AW-PCM测试软件.〈br〉
〈br〉

Allwin21 Corp (www.allwin21.com) 是一家总部设在美国硅谷的专业半导体设备与技术服务公司。我公司可提供全新的或翻新的快速退火炉或保护气氛热处理炉Heatpulse  AG610 、EG2001/2010/1034探针台;HP4062/HP4145测试仪;AW-PCM测试软件

 

Allwin21 Corp 于2006年10月从应用材料(Applied Materials)取得*生产、销售、服务AG Heatpulse 210,AG Heatpulse 410,AG Heatpulse 610的经营权。Allwin21 Corp.在AG Heatpulse 610的基础上,结合她自主开发的全新GUI控制软件精确的温度控制技术,生产、制造AccuThermo AW 410,AccuThermo AW 610,AccuThermo AW 810桌上型保护气氛热处理炉
 
产品使用:
• 离子注入后快速退火;
• 欧姆接触快速合金;
• 硅化物合金退火;
• 氧化物生长;
• Solar Cell 太阳能电池
• LED
• 化合物材料研究
• 纳米材料研究
• MEMS研究
• 其它快速热处理工艺。
 
产品特点:
1.*的GUI图形软件;
2.精确的温度控制技术;
3.具备power summary功能;
4.*的ERP高温计;
5.冷壁系统;
6.zui多4路工艺气体,MFC控制;
7.单片,闭环温度控制;
8.快速升温与降温控制:10-150 C/秒
9.工艺重复性好;
10.                    软件校准,精确方便;
11.                    软件界面显示设备全部信息,方便维修、使用;
 
同一般管式高温炉的比较:
 
一般管式高温炉只能一个工艺条件,即一个温度;工艺周期长,使用不太灵活;须24小时加电恒温,能耗较高.
 
快速退火炉,可以设多个工艺条件,即多种温度;工艺时间短,使用非常灵活;能耗很低;同一台设备既可用作生产,也可用作科研,且任何科研工艺条件不会对生产工艺造成影响

 

 

AccuThermo AW 610 is a desktop rapid thermal processor which uses high-intensity, visible radiation to heat single wafer for short periods at precisely controlled temperatures. These capabilities, combined with the heating chamber''s cold-wall design, superior heating uniformity advanced temperature control technologyAW 900 new software, provide significant advantages over conventional furnace processingconventional RTP systems. 

 

 

Rapid thermal processing (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1200 C or greater) on a timescale of several seconds or less. The wafers must be brought down (temperature) slow enough however, so they do not break due to thermal shock..Such rapid heating rates are attained by high intensity lamps process. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflowchemical vapor deposition.

Rapid thermal anneal (RTA) is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate. Rapid thermal anneals are performed by equipment that heats a single wafer at a time using lamp based heating that a wafer is brought near. Unlike furnace anneals they are short in duration, processing each wafer in several minutes. Rapid thermal anneal is a subset of processes called Rapid Thermal Process (RTP).

AG Associates Heatpulse is one of the most famous RTP equipment manufacturers. Many Integrated Chip companies, R&D centers, Institutes all over the world have been using AG Heatpulse Systems. 

Allwin21 Corp can provide the following refurbished RTP equipment

  • AG Heatpulse 210
  • AG Heatpulse 410
  • AG Heatpulse 610  

           

       Heatpulse 210                                  Heatpulse 610                      

Allwin21 Corp. can also provide  Allwin21 Corp proprietary AW Control SoftwareSuperior Temperature Control Technology  to upgrade the refurbished equipment which provides the following significant advantages

  • Integrated process control system
  • Real time graphics display
  • Real time process data acquisition, display,analysis
  • Programmed comprehensive calibrationdiagnostic functions
  • Better performancemaintenance than the original systems

 

Allwin21 is the exclusive licenced manufacture for AG Heatpulse 610.  Allwin21 is manufacturing the AccuThermo AW-610,originally the AG Heatpulse 610.The AccuThermo AW-610 has innovative softwaremore advanced temperature control technologies.

 New AccuThermo AW 610

New AccuThermo AW 810M

 

 

AccuThermo  AW 610’s key features include:                                                                 

  • Advanced ERP Pyrometer for precise high temperature measurement
  • Add timer watch for the oven safety issue (the original  has no safety interlock for the computer locks up, chamber would be burned if the computer locks up when process running).
  • The new software with power summary function to detect either lamp failure or sensor failure
  •  Manual Operation
  • Use Sumpower as a parameter to control the uniformity of the wafer.
  • Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
  • Precise time-temperature profiles tailored to suit specific process requirements.
  • High-intensity visible radiation heats wafers for short periods. Fast heatingcooling rates unobtainable in conventional technologies.
  • Consistent wafer-to-wafer process cycle repeatability.
  • Elimination of external contamination.
  • Small footprintenergy efficiency.
  • Software calibrationeasy to be done.
  • More functionsI/O hardware “exposed” for easier maintenancetrouble shooting.
  • It is easy to edit recipe with GUIgraph display.
  • Save all process data on the computer hard disk.
  • A/DD/A precision is 14 to 16 bits.
  • Detect in processwith color curve displayed on the screen.
  • Lamp damage detect in process.  
  • Sensor status detect function.
  • On line help function

AccuThermo AW 610 RTA RTP is a versatile tool, which is useful for many applications:
• Ion Implant Activation
• Polysilicon Annealing
• Oxide Reflow
• Silicide Formation
• Contact Alloying
• OxidationNitridation
• GaAs Processing
For a bibliographyreprints of technical journal articles regarding these AccuTherm  applications, contact the Allwin21 Corp. Marketing Communications Department.

 

 

 

Rapid thermal processing (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1200 C or greater) on a timescale of several seconds or less. The wafers must be brought down (temperature) slow enough however, so they do not break due to thermal shock..Such rapid heating rates are attained by high intensity lamps process. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition.

Rapid thermal anneal (RTA) is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate. Rapid thermal anneals are performed by equipment that heats a single wafer at a time using lamp based heating that a wafer is brought near. Unlike furnace anneals they are short in duration, processing each wafer in several minutes. Rapid thermal anneal is a subset of processes called Rapid Thermal Process (RTP).

Rapid thermal processing (RTP) provides a way to rapidly heat wafers to an elevated temperature to perform relatively short processes, typically less than 1-2 minutes long. Over the years, RTP has become essential to the manufacture of advanced semiconductors, where it is used for oxidation, annealing, silicide formation and deposition.

An RTP system heats wafers singly, using radiant energy sources controlled by a pyrometer that measures the wafer's temperature. Previous thermal processing was based on batch furnaces, where a large batch of wafers is heated in a tube. Batch furnaces are still widely used, but are more appropriate for relatively long processes of more than 10 minutes.

RTP is a flexible technology that provides fast heating and cooling to process temperatures of ~200-1250??C with ramp rates typically 20-200??C/sec, combined with excellent gas ambient control, allowing the creation of sophisticated multistage processes within one processing recipe. This capability to process at elevated temperatures for short time periods is crucial because advanced semiconductor fabrication requires thermal budget minimization to restrict dopant diffusion. Replacement of the slower batch processes with RTP also enables some device makers to greatly reduce manufacturing cycle time, an especially valuable benefit during yield ramps and where cycle-time minimization has economic value.

RTP systems use a variety of heating configurations, energy sources and temperature control methods. The most widespread approach involves heating the wafer using banks of tungsten-halogen lamps because these provide a convenient, efficient and fast-reacting thermal source that is easily controlled. In a typical RTP system , the wafer is heated by two banks of linear lamps ?a one above and one below it. The lamps are further subdivided into groups or zones that can be individually programmed with various powers to maximize temperature uniformity. In RTP, the energy sources face the wafer surfaces rather than heating its edge, as happens in a batch furnace. Thus, RTP systems can process large wafers without compromising process uniformity or ramp rates. RTP systems frequently incorporate the capability to rotate the wafer for better uniformity.

An important RTP application is the activation of ion-implanted dopants to form ultrashallow junctions. This requires fast ramp and cooling capabilities because the wafer must be heated to ~1050??C to anneal out ion implantation damage and activate the implanted dopant species. However, the time at temperature must be reduced to minimize diffusion. This has led to the spike-anneal approach, where the wafer is ramped to a high temperature and then cooled immediay.

Another indispensable RTP application is in the formation of silicides. In this process, metal films react with the silicon on source/drain and gate regions to form silicides. In advanced logic processes, the metal is usually cobalt, but nickel is being explored for the 65 nm node. Silicide formation processes are usually performed at <500??C, and wafers must be kept in a very pure gas ambient because metal films can be sensitive to oxidation. RTP systems are ideal, because they have small chamber volumes easily purged with high-purity gas, creating a very clean environment.

RTP is also increasingly important in oxidation applications, where the capability to use short process times at high temperatures and a wide variety of gas ambients provides excellent quality films and superior process control. RTP-grown oxides are often used for gate dielectrics, tunnel oxides and shallow-trench isolation liners. The use of steam in the gas ambient has opened new RTP applications. One of special interest for advanced DRAM technology is the use of a hydrogen-rich steam ambient for selective oxidation of gate stacks that include tungsten.

Recently, RTP-like processing has found applications in another rapidly growing field ?a solar cell fabrication. RTP-like processing, in which an increase in the temperature of the semiconductor sample is produced by the absorption of the optical flux, is now used for a host of solar cell fabrication steps, ncluding phosphorus diffusion for N/P junction formation and impurity gettering, hydrogen diffusion for impurity and defect passivation, and formation of screen-printed contacts using Ag-ink for the front and Al-ink for back contacts, respectively.

Some solar cell companies have successfully applied our advanced Rapid Thermal Processing (RTP) technology to its process for creating highly efficient and durable CIGS solar cells. This eliminates a key process bottleneck found in many state-of-the-art process implementations and enables the use of low-cost substrates in ways that were not considered possible before.

In Rapid Thermal Processing, a layer is heated for a very brief period only in a highly controlled way. For instance, RTP techniques can flash-heat a layer for just several picoseconds and put energy just into the top several nanometers of a layer in a highly controlled way -- while leaving the rest of the layer unaffected.

RTP has a secondary benefit of reducing the energy payback time of their solar cells to less than two months (for the full panel). By comparison, a typical silicon solar panel has an energy payback time of around three years, and a typical vacuum-deposited thin-film cell has one of 1-2 years. The energy payback time is the time that a solar panel has to be used in order to generate the amount of energy that it required to be produced.

Vacuum Rapid Thermal processing ag 210 ag2101 JIPELEC ag 610 ag2146 used-line Jipelec JetClip sg JetStar AG bid service JetClip AG  AST SHS2000 AST STEAG 2800  ssintegration Techlink JetClip sg Rapid Thermal Oxide ssintegration Jipelec JetFirst AG Heatpulse410 ag410 specequipment RLA-3108 AG 310 Mattson annealsys rapid thermal processes Jipelec JetStar heatpulse ag 2146 ssi Koyo Thermo Systems AG Heatpulse210 AST STEAG-MATTSON 2800 heat pulse Solaris Eclipse Rapid Thermal Annealing modularpro RLA-1000 AG Heatpulse  rapid thermal processor Steag AST SHS2000 Solaris 75 AG  ag210 bidservice Solaris75 STEAG Electronic Systems  ag associates eng-sol.Annealsys RLA-3000 Rapid thermal Anneal Engineering Solutions  annealsys Heatpulse 410 rapid thermal process eng-sol Solaris 150 AG Heatpulse 210 STEAG AG Heatpulse 310 JetFirst Rapid Thermal Annealer  AS-Master STEAG Electronic Systems Rapid Thermal Oxidation RTA RTP  modularpro.RTO Modular  Process Technology Jipelec JetClip STEAG 2800 ag 2101 Solaris150 AG Heatpulse310 ag610 AS-One Solaris AG310 ag2106 AS-Micro .

Allwin21 is the exclusive licensed manufacturer of   AG Heatpulse 610  Rapid Thermal Processor.  Allwin21 is manufacturing the AccuThermo AW 410,AccuThermo AW 610,AccuThermo AW 810,AccuTherm AW 820, AtmosPress Rapid Thermal Processors and  AccuThermo AW 610V,AccuThermo AW 820V vacuum Rapid Thermo Processors.Compared with traditional RTP system, Allwin21"s AccuThermo AW RTPs have innovative software and more advanced temperature control technologies.   

 

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