目录:四川梓冠光电科技有限公司>>硅基芯片>>芯片>> ZGSOI芯片光电探测器阵列
SOI芯片光电探测器阵列
SOI Chip-based Photodetector Array
SOI芯片式光电探测器阵列，该产品基于硅基锗-硅光电探测器，实现了多通道光电探测器的单片化集成，可片上集成光学混频器，芯片尺寸小，集成度高，偏振相关性小，模拟带宽大，可提供裸片或光电一体化封装产品方案。
Chip-based multi-channel photodetector array is a product based on Ge-Si SOI platform. This product achieved the integration of multi-channel photodetectors on a single SOI chip. The MMI-based optical hybrider/mixer could also be integrated on the chip. It is capable of tiny polarization sensitivity and large electrical bandwidth. Both the die products and chip package solutions are provided.
〖性能指标Specifications〗
参数指标 Parameters
| 单位 Unit | 最小值 Min. | 典型值 Typ.
| 最大值 Max. | 备注 Notes |
波长范围 Wavelength range | nm | 1530—1570 nm or 1270nm—1330 nm
| |||
暗电流 Dark current
| nA | 35 | 50 | ||
3 dB模拟带宽 3 dB bandwidth | GHz | 28 | |||
光饱和功率 Optical saturation power | mW | 10 | |||
响应度 Responsibility | A/W | 0.8 | 0.85 | ||
90度光学混频器损耗 90°mixer loss | dB | 6 | 6.5 | 6.7 | |
90度光学混频器相位失衡度 90°mixer phase unbalance | ° | 5 | |||
通道数 Number of channels | 8或可定制 8 or Can be customized | ||||
光纤接入损耗 Insertion loss | dB | ≤0.5 | |||
偏振相关损耗 PDL | dB | ≤0.3 | |||
工作温度范围 Operating temperature range | °C | -20 | 50 | ||
工作湿度范围 Operating humidity range | % | +65 | |||
芯片尺寸 Chip Dimensions | mm | 4(L)×5(W)×0.5(H) | |||
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