SbSI 硅化锑晶体 返回列表页

Commercially available first ferroelectric semiconductor SbSI 1D and 2D vdW crystals. Bulk V-VI-VII semiconductor has a orthorhombic structure with the space group of Pna21, and crystallises in 1D chains which are held together by van der Waals interaction. 1D crystals by exfoliation or mechanical cleavage. It has been shown to be luminescent semiconductor in the bulk from (Eg~1.6 eV), however material characteristics of monolayer thick SbSI still remain unknown. It has been shown that these materials possess good ferroelectric behavior (ferroelectric response in monolayers is still unknown), exhibit photoferroic effects, good photoluminescence and light-matter characteristics, and electronic behavior.

SbSI crystals have been synthesized using flux zone which similar to chemical vapor transport technique except no transport agents are used to achieve high crystalline and and contamination free materials. Typical product measures nearly 1cm in size. It is extremely easy to exfoliate onto desired substrates. They are environmentally stable and suitable for electronic, optical, and ferroelectrics research.

Material characteristics

Ferroelectric semiconductor
2D anisotropic semiconductor
High mobility semiconductor
Optically luminescent

References

[1] "Atomically sharp 1D SbSeI, SbSI and SbSBr with high stability and novel properties for microelectronic, optoelectronic, and thermoelectric applications" arXiv:1703.05732

[2] "Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited"; Energy Environ. Sci., 2015,8, 838-848