详细摘要： Zirconium disulfide （ZrS₂） is an indirect gap layered semiconductor in the bulk ...

详细摘要： Zirconium disulfide （ZrS₂） is an indirect gap layered semiconductor in the bulk ...

详细摘要： More than a decade of growth optimization in chemical vapor transport （CVT） as w...

详细摘要： 100% environmentally stable metallic NbS2 （niobium disulfide） crystals: NbS2 dis...

详细摘要： Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

详细摘要： ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, ex...

详细摘要： Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band ...

详细摘要： NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's ma...

详细摘要： 14 years of growth optimization in chemical vapor transport （CVT） as well as flu...

详细摘要： Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly lumine...

详细摘要： Our TiS2 crystals are stabilized in 1T ohase （semimetallic phase）.

详细摘要： 14 years of growth optimization in chemical vapor transport （CVT） as well as flu...

详细摘要： Hafnium disulfide （HfS₂） is an indirect gap layered semiconductor in the bulk an...

详细摘要： Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed...

详细摘要： More than a decade of growth optimization in chemical vapor transport （CVT） as w...

详细摘要： Our single crystal GeS （Germanium sulfide） crystals come with guaranteed optical...

详细摘要： The only commercially available TlGaS2 vdW crystals have been synthesized at our...

详细摘要： The only commercially available TlInS2 vdW crystals have been synthesized at our...

详细摘要： Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials.

详细摘要： Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2...