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化工仪器网>产品展厅>配件耗材>其它仪器配件耗材>其它仪器配件> 基于蓝宝石衬底的全区域覆盖的单层二硫化铼

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基于蓝宝石衬底的全区域覆盖的单层二硫化铼

参考价 ¥ 6979.7
订货量 ≥1
具体成交价以合同协议为准
产品标签

单层二硫化铼

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泰州巨纳新能源有限公司(SUNANO ENERGY)于2010年7月成立,是低维材料领域的ling导企业,也是石墨烯及二维材料术语国家标准*起草单位、全国纳米技术标准化技术委员会低维纳米结构与性能工作组SAC/TC279?WG9秘书处单位,建有国家火炬泰州石墨烯研究检测平台。
注册资本人民币1.1亿元,主要从事石墨烯等低维材料的研发、制备、检测和应用。
研发团队主要由留学英国、美国、法国、新加坡的博士组成,部分成员来自于2010年诺贝尔物理学奖小组,客户遍布*。同时,管理团队有丰富的海内外成功经验。
 

石墨烯等低维材料的研发、制备、检测和应用

供货周期 现货 应用领域 环保,化工,能源,综合

This product contains full area coverage ReS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReS2 sheet. Synthesized full area coverage monolayer ReS2 is highly crystalline, some regions also display significant crystalline anisotropy.



Sample Properties.

Sample size

1cm x 1cm square shaped

Substrate type

Sapphire c-cut (0001)

Coverage

Full monolayer coverage

Electrical properties

1.6 eV Anisotropic Semiconductor (Indirect Bandgap)

Crystal structure

Distorted Tetragonal Phase (1T’)

Unit cell parameters

a = 0.630, b = 0.638 nm, c = 0.643 nm

α = 106.74°, β = 119.03°, γ = 89.97°

Production method

Atmospheric Pressure Chemical Vapor Deposition (APCVD)

Characterization methods

Raman, angle resolved Raman spectroscopy,

photoluminescence, absorption spectroscopy TEM, EDS

Specifications

1)    Identification. Full coverage 100% monolayer ReS2 uniformly covered across c-cut sapphire.

2)    Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3)    Smoothness. Atomically smooth surface with roughness < 0.2 nm.

4)    Uniformity. Highly uniform surface morphology. ReS2 monolayers uniformly cover across the sample.

5)    Purity. 99.9995% purity as determined by nano-SIMS measurements

6)    Reliability. Repeatable Raman and photoluminescence response

7)    Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8)    Substrate. c-cut Sapphire but our research and development team can transfer ReS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

9)    Defect profile. ReS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected ReS2 using α-bombardment technique.


Supporting datasets [for 100% Full area ReS2 monolayers on c-cut Sapphire]

Transmission electron images (TEM) and angle resolved Raman spectroscopy measurements acquired from CVD grown full area coverage ReS2 monolayers on c-cut sapphire confirming crystalline anisotropy.

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer ReS2 on c-cut sapphire

Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples. Differential reflectance measurements clearly show band gap at 1.6 eV for ReS2 consistent with the existing literature values. PL spectrum only display weak emission at 1.6 eV but significantly stronger at lower temperatures.




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